Abstract

Semiconductor lasers with a short tum-on delay time are essential as light sources for optical interconnection systems and access networks. An extremely low threshold current 0.56 mA, has been achieved in 1.3-µm compressively strained quantum well (QW) lasers¹ to reduce turn-on delay time. To achieve further reduction, a combination of the modulation-doped (MD) structure² with compressive strain is promising due to the resulting reduced carrier lifetime as well as the low threshold current. However, the dependence on doping type of laser properties in strained MD-QW lasers has not yet been reported. In this paper, we theoretically investigate the effect of modulation doping on tum-on delay time in 1.3-µm stained QW lasers.

© 1995 IEEE