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Conferences > OECC > 1996 > 18D4 > 18D4.2
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 18D4.2

Reduction in Threshold Current and Carrier Lifetime in 1.3-µm InGaAsP/InP n-type Modulation-doped Strained Multi-quantum Well Lasers with a Buried Heterostructure

K. Nakahara, K. Uomi, T. Haga, T. Taniwatari, and A. Oishi

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Abstract

An n-type modulation-doped InGaAsP strained multi-quantum well laser with a buried heterostructure was demonstrated, for the first time, to reduce threshold curren t and carrier lifetime.

© 1996 IEICE

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