Abstract
Low-threshold current operation of a laser diode is important to reduce the power consumption of the diode itself and its driving circuit. One approach to reduce the threshold current is to use modulation-doped quantum-well structures as the active layers. The decrease of the transparent carrier density by n-type modulation doping, which leads to the reduction of threshold current, has been theoretically predicted [1] and recently experimentally demonstrated in GaAs/AlGaAs [2] and InGaAs/InAlGaAs [3] system. In this work, we studied 1.3-pm InGaAsP/InGaAsP strained-layer quantum-well lasers with n-type modulation doping and obtained very low threshold current density.
© 1994 Optical Society of America
PDF ArticleMore Like This
K. Nakahara, K. Uomi, T. Haga, T. Taniwatari, and A. Oishi
18D4.2 Optoelectronics and Communications Conference (OECC) 1996
A. Niwa, T. Ohtoshi, and K. Uomi
P16 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 1995
G. Vermeire, F. Vermaerke, P. Van Daele, and P. Demeester
CFE3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994