Abstract

A semiconductor laser array with short turn-on delay time is required for high- density parallel optical interconnects. We previously reported a low-threshold (1.3 mA) laser array¹ and an extremely low threshold (0.5 mA) laser² in 1.3-μm compressively strained multi-quantum well (MQW) lasers, from the viewpoint of shortening turn-on delay time. To further reduce turn-on delay time, the n-type modulation-doped (MD) MQW laser³ is attractive for reducing carrier lifetime and threshold current. Lowered threshold current density has been reported for MD-MQW lasers;^4,5 however, reductions in the carrier lifetime and in the tum-on delay time for MD-MQW lasers have not yet been reported. In this paper, we have demonstrated for the first time that carrier lifetime and tum-on delay time can be reduced with a 1.3-μm n-type MD- MQW laser.

© 1995 IEEE