Abstract

A monolithic semiconductor laser array on p-type substrate with low threshold current and uniform characteristics, is required for parallel high-density optical interconnections. As can be seen in Fig. 1 on the calculated tum-on delay time, threshold current should be lower than about 1.5 and 1.0 mA for 500 Mbit/s and 1 Gbit/s applications, respectively, to get an error-free transmission. The lowest threshold as a semiconductor laser was reported in GaAs-based laser, as shown in Fig. 2. Recently, the threshold of long- wavelength laser was drastically improved,by employing an strained MQW active layer. This paper fully reviews the ultralow threshold properties of our 1.3-pm strained-MQW laser.

© 1995 IEEE