Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1995 > CTuL > CTuL1
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CTuL1

Low-threshold-current-density operation of 1.3-µm GaInAsP/InP tensilely strained quantum-well lasers

N. Yokouchi, N. Yamanaka, N. Iwai, and A. Kasukawa

Not Accessible

Your library or personal account may give you access

Abstract

Semiconductor lasers emitting at 1.3 µm with low threshold current are expected to be important light sources for optical-communication and optical-interconnection systems. Although low-threshold 1.3-µm compressively strained quantum-well (QW) lasers have been reported,1,2 tensilely strained QW lasers have not been sufficiently investigated. In this paper, the effect of the number of wells and the amount of strain is investigated for 1.3-µm tensilely strained GaInAsP/InP graded-index separate-confinement-heterostructure (GRIN-SCH) QW lasers.

© 1995 Optical Society of America

PDF Article
More Like This
Relative Intensity Noise of 1.3µm-GaInAsP/InP Tensile-Strained Multiple Quantum Well Lasers

N. Yokouchi, Y. Nakahira, N. Yamanaka, N. Iwai, and A. Kasukawa
18D4.4 Optoelectronics and Communications Conference (OECC) 1996

Very low threshold current density (410-A/cm2) 1.3-µm GaInAsP graded index separate continement heterostructure multiple quantum well laser

A. KASUKAWA, Y. IMAJO, I. J. MURGATROYD, and S. KASHIWA
TUD3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Low-Threshold 1.3-µm GaInAsP/InP Multi-Quantum Well Surface-Emitting Lasers

S. Uchiyama and T. Ninomiya
19D1.3 Optoelectronics and Communications Conference (OECC) 1996

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use