Abstract

Since the initial studies of ionization-coefficient improvement through band-gap engineering by Chin, Capasso, and others, many schemes for overcoming the limitations of conventional avalanche photodiodes (APDs) have been both proposed and demonstrated. InGaAs/InAlAs-based APDs have recently come under intense investigation because of their ability to detect light in the 1.3- 1.55-µm wavelength region of transmission in silica optical fibers. These devices are particularly well suited for high-speed optical communications because of their high sensitivity, simple construction, and low power consumption. This paper focuses mainly on recent developments in InAl-GaAs quantum-well superlattice APDs.

© 1994 Optical Society of America