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Broadband optoelectronic integrated receiver front-ends comprising InP-based heterojunction bipolar transistors and base-collector photodiodes

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Abstract

Optoelectronic integrated circuits (OEICs) may be the implementation choice over hybrid receivers for long-wavelength photoreceiver front-ends required to operate at data rates ≥ 10 Gbit/s. The OEIC advantage is primarily due to the achievement of reduced parasitics associated with the node connecting the photodiode and the preamplifier circuit, thereby permit-ting wider-bandwidth operation. Other potential advantages are higher reliability and lower manufacturing costs. Previously, the performance advantage has been offset by the complexities associated with the simultaneous realization of high-quality optical and electronic devices, and, as a result, hybrid receivers have offered, to date, better performance than OEICs, particularly for < 10-Gbit/s operation. However, promising results for OEIC receivers have been reported in recent years in a variety of technologies: p-i-n junction field-effect transistor (JFET),1 metal-semiconductor-metal (MSM) high-electron-mobility transistor (HEMT),2 p-i-n HEMT," and p-i-n hetero-junction bipolar transistor (HBT).4,5 In this paper we present results for broadband OEIC receivers based on InP-based HBT technology, which will be useful in applications requiring 20-Cbids operation and beyond.

© 1994 Optical Society of America

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