Large gain-bandwidth-product, low dark-current InAlAs/lnAlGaAs quaternary-well superlattice avalanche photodiodes

I. Watanabe; S. Sugou; H. Ishikawa; H. Ishikawa; T. Anan; K. Makita; M. Tsuji; K. Taguchi

doi:10.1364/OFC.1993.ThG1

Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication
1993 OSA Technical Digest Series (Optica Publishing Group, 1993),
paper ThG1
•https://doi.org/10.1364/OFC.1993.ThG1

Large gain-bandwidth-product, low dark-current InAlAs/lnAlGaAs quaternary-well superlattice avalanche photodiodes

I. Watanabe, S. Sugou, H. Ishikawa, T. Anan, K. Makita, M. Tsuji, and K. Taguchi

Optical Fiber Communication Conference 1993

San Jose, California United States
ISBN: 1-55752-282-0

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Photodetectors and Optical Receivers (ThG)

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I. Watanabe, S. Sugou, H. Ishikawa, T. Anan, K. Makita, M. Tsuji, and K. Taguchi, "Large gain-bandwidth-product, low dark-current InAlAs/lnAlGaAs quaternary-well superlattice avalanche photodiodes," in Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication, Vol. 4 of 1993 OSA Technical Digest Series (Optica Publishing Group, 1993), paper ThG1.

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Abstract

Recently, superlattice avalanche photodiodes (SL-APD’s)^1,2 have been intensively investigated for high-sensitivity 10-Gbit/s long-wavelength optical communication systems.^3-5 However, there have been few reports about SL-APD’s having both gain-bandwidth (GB) products larger than 100 GHz and submicroampere dark-current characteristics. This paper reports InAlAs/lnAlGaAs quaternary-well SL-APD’s satisfying both characteristics.

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