Abstract
A new type laser, which consists of multiple-microcavity structure formed by an etching of very narrow vertial grooves between very short active elements, was proposed for low threshold current operation, and a room-temperature CW operation with threshold current density of 230A/cm2 was obtained for 1.5μm wavelength GaInAsP/InP compressively strained MQW structure laser with the total cavity length of 60μm.
© 1996 IEICE
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