Abstract
The surface-emitting (SE) laser1 becomes more attractive for future parallel lightwave communications, if a long wavelength device is constructed. However, there are some difficulties in obtaining a cw device at room temperature. Recently, pulsed operation around room temperature has been demonstrated by increasing mirror reflectivities.2–4 Further threshold carrier density reduction is needed for room temperature cw operation. We have proposed and demonstrated a wavelength selective filter based on an AI-GaAs/GaAsSE laser5 and a GaInAsP/InP SE laser.6 In this structure, external light can pass through the SE laser cavity, which gives a new function to the SE laser, such as narrowband filter, modulator, switching, pulse shaping, and so on. In this study, we demonstrate low threshold current density operation of a transmission-type GaInAsP/InP SE laser with transparent mirrors on both sides of the cavity.
© 1992 Optical Society of America
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