Abstract

A 1.3-μm GaInAsP/InP surface emitting (SE) laser has wide application in optical communication and optical inter-connections. Previously, we improved a buried heterostructure for GaInAsP/InP SE laser regrown by metalorganic chemical vapor deposition (MOCVD)[1] and introduced Si/Al₂O₃ layer, which has a higher thermal conductivity than Si/SiO₂ layer, into p-side mirror of 1.3-μm SE laser 12] and demonstrated 1.3-μm SE lasers with a bulk active layer. A low threshold room-temperature pulsed operation (I_th= 12mA) and a continuous-wave (CW) operation up to 13 °C were obtained[2]. Recently, the room-temperature CW operation of 1.5-μm SE laser with strained-layer multi-quantum-wells (SL-MQW) was reported [3]. To get better performances of a 1.3-μm SE laser, it is considered to be important to introduce a SL-MQW into its active layer. In this study, we have demonstrated a 1.3-μm GaInAsP/InP SL-MQW SE laser and have achieved CW operation up to 36°C, which is the highest CW operating temperature for long-wavelength SE laser.

© 1996 IEEE