Low-Threshold 1.3-µm GaInAsP/InP Multi-Quantum Well Surface-Emitting Lasers

S. Uchiyama; T. Ninomiya

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 19D1.3

Low-Threshold 1.3-µm GaInAsP/InP Multi-Quantum Well Surface-Emitting Lasers

S. Uchiyama and T. Ninomiya

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
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VCSEL (19D1)

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S. Uchiyama and T. Ninomiya, "Low-Threshold 1.3-µm GaInAsP/InP Multi-Quantum Well Surface-Emitting Lasers," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 19D1.3.

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Abstract

First room-temperature pulsed operation of 1.3-µm GaInAsP/InP multi-quantum well surface emitting laser was demonstrated with low threshold current of 10 mA. CW operation up to 10 °C was also achieved.

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