Abstract
In this paper, an analytical a-Si:H thin-film transistor (TFT) model
based on surface potential is presented. Firstly, an explicit approximation
for the surface potential as a function of terminal voltages is proposed.
In the new analytical solution, simultaneously, the effects of localized trapped
charges and free carriers are considered. Moreover, the complex iterative
computation is eliminated in the solution. Comparing with the numerical results,
the proposed solution shows a high accuracy for predicting the surface potential
under various biases. Secondly, a charge sheet model is then developed for
the analysis of DC characteristics of a-Si:H TFT. The improved model can describes
all operation regions via an unique formula and it is verified by a reasonable
agreement between the simulated results and the experimental data.
© 2008 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription