Abstract

Drain currents as functions of the gate voltages for the thin-film transistors (TFTs) showed that their output currents had slight differential variations in the saturation region just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages for the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. The color gamut of organic light-emitting devices (OLEDs) embedded with TFTs with a coplanar structure satisfied the digital cinema initiatives of 99%. Furthermore, the image density of large-size OLEDs embedded with TFTs with a coplanar structure was significantly enhanced in comparison with that of OLEDs embedded with conventional TFTs.

© 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Full Article  |  PDF Article
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  1. X. Luan, J. Liu, Q. Pei, G. C. Bazan, and H. Li, “Gate-tunable electron injection based organic light-emitting diodes for low-cost and low-voltage active matrix displays,” ACS Appl. Mater. Interfaces 9(20), 16750–16755 (2017).
    [Crossref] [PubMed]
  2. Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
    [Crossref] [PubMed]
  3. H.-J. Kim, M.-H. Shin, J.-S. Kim, S.-E. Kim, and Y.-J. Kim, “High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling,” Sci. Rep. 7, 43063 (2017).
    [Crossref] [PubMed]
  4. J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
    [Crossref]
  5. T. Kamiya, K. Nomura, and H. Hosono, “Present status of amorphous In-Ga-Zn-O thin-film transistors,” Sci. Technol. Adv. Mater. 11(4), 044305 (2010).
    [Crossref] [PubMed]
  6. K. Myny, “The development of flexible integrated circuits based on thin-film transistors,” Nat. Electron. 1(1), 30–39 (2018).
    [Crossref]
  7. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin film transistors,” Jpn. J. Appl. Phys. 45(5B), 4303–4308 (2006).
    [Crossref]
  8. C. Liu, Y. Xu, Y. Li, W. Scheideler, and T. Minari, “Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors,” J. Phys. Chem. C 117(23), 12337–12345 (2013).
    [Crossref]
  9. C. Wang, Z. Hu, X. He, C. Liao, and S. Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” IEEE Trans. Electron Dev. 63(9), 3800–3803 (2016).
    [Crossref]
  10. W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
    [Crossref]
  11. J. Park, W. Maeng, H. Kim, and J. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
    [Crossref]
  12. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
    [Crossref] [PubMed]
  13. J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo, and H.-D. Kim, “High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel,” Appl. Phys. Lett. 91(11), 113505 (2007).
    [Crossref]
  14. Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
    [Crossref] [PubMed]
  15. J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).
  16. N. Tiwari, R. Chauhan, H. Shieh, P. Liu, and Y. Huang, “Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions,” IEEE Trans. Electron Dev. 63(4), 1578–1581 (2016).
    [Crossref]
  17. Y. Chen, D. Geng, M. Mativenga, H. Nam, and J. Jang, “High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs,” IEEE Electron Device Lett. 36(2), 153–155 (2015).
    [Crossref]
  18. X. Xu, Q. Cui, Y. Jin, and X. Guo, “Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150°C,” Appl. Phys. Lett. 101(22), 222114 (2012).
    [Crossref]
  19. J. Lee, I. Cho, J. Lee, and H. Kwon, “Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors,” Appl. Phys. Lett. 93(9), 093504 (2008).
    [Crossref]
  20. Y.-C. Han, M.-S. Lim, J.-H. Park, and K.-C. Choi, “ITO-free flexible organic light-emitting diode using ZnS/Ag/MoO3 anode incorporating a quasi-perfect Ag thin film,” Org. Electron. 14(12), 3437–3443 (2013).
    [Crossref]
  21. K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing,” Appl. Phys. Lett. 93(19), 192107 (2008).
    [Crossref]
  22. A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
    [Crossref] [PubMed]
  23. S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
    [Crossref]
  24. M. Mativenga, S. Hong, and J. Jang, “High current stress effects in amorphous-InGaZnO4 thin-film transistors,” Appl. Phys. Lett. 102(2), 023503 (2013).
    [Crossref]
  25. S. Lee, D. Jeong, M. Mativenga, and J. Jang, “Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers,” Adv. Funct. Mater. 27(29), 1700437 (2017).
    [Crossref]
  26. D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
    [Crossref] [PubMed]
  27. J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
    [Crossref]
  28. S. Lee, J. Shin, and J. Jang, “Top Interface Engineering of Flexible Oxide Thin-Film Transistors by Splitting Active Layer,” Adv. Funct. Mater. 27(11), 1604921 (2017).
    [Crossref]
  29. M. Mativenga, D. Geng, B. Kim, and J. Jang, “Fully transparent and rollable electronics,” ACS Appl. Mater. Interfaces 7(3), 1578–1585 (2015).
    [Crossref] [PubMed]

2018 (1)

K. Myny, “The development of flexible integrated circuits based on thin-film transistors,” Nat. Electron. 1(1), 30–39 (2018).
[Crossref]

2017 (7)

X. Luan, J. Liu, Q. Pei, G. C. Bazan, and H. Li, “Gate-tunable electron injection based organic light-emitting diodes for low-cost and low-voltage active matrix displays,” ACS Appl. Mater. Interfaces 9(20), 16750–16755 (2017).
[Crossref] [PubMed]

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

H.-J. Kim, M.-H. Shin, J.-S. Kim, S.-E. Kim, and Y.-J. Kim, “High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling,” Sci. Rep. 7, 43063 (2017).
[Crossref] [PubMed]

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).

S. Lee, D. Jeong, M. Mativenga, and J. Jang, “Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers,” Adv. Funct. Mater. 27(29), 1700437 (2017).
[Crossref]

S. Lee, J. Shin, and J. Jang, “Top Interface Engineering of Flexible Oxide Thin-Film Transistors by Splitting Active Layer,” Adv. Funct. Mater. 27(11), 1604921 (2017).
[Crossref]

2016 (3)

N. Tiwari, R. Chauhan, H. Shieh, P. Liu, and Y. Huang, “Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions,” IEEE Trans. Electron Dev. 63(4), 1578–1581 (2016).
[Crossref]

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

C. Wang, Z. Hu, X. He, C. Liao, and S. Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” IEEE Trans. Electron Dev. 63(9), 3800–3803 (2016).
[Crossref]

2015 (3)

Y. Chen, D. Geng, M. Mativenga, H. Nam, and J. Jang, “High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs,” IEEE Electron Device Lett. 36(2), 153–155 (2015).
[Crossref]

M. Mativenga, D. Geng, B. Kim, and J. Jang, “Fully transparent and rollable electronics,” ACS Appl. Mater. Interfaces 7(3), 1578–1585 (2015).
[Crossref] [PubMed]

A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
[Crossref] [PubMed]

2013 (3)

Y.-C. Han, M.-S. Lim, J.-H. Park, and K.-C. Choi, “ITO-free flexible organic light-emitting diode using ZnS/Ag/MoO3 anode incorporating a quasi-perfect Ag thin film,” Org. Electron. 14(12), 3437–3443 (2013).
[Crossref]

M. Mativenga, S. Hong, and J. Jang, “High current stress effects in amorphous-InGaZnO4 thin-film transistors,” Appl. Phys. Lett. 102(2), 023503 (2013).
[Crossref]

C. Liu, Y. Xu, Y. Li, W. Scheideler, and T. Minari, “Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors,” J. Phys. Chem. C 117(23), 12337–12345 (2013).
[Crossref]

2012 (4)

X. Xu, Q. Cui, Y. Jin, and X. Guo, “Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150°C,” Appl. Phys. Lett. 101(22), 222114 (2012).
[Crossref]

J. Park, W. Maeng, H. Kim, and J. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

2011 (1)

S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
[Crossref]

2010 (1)

T. Kamiya, K. Nomura, and H. Hosono, “Present status of amorphous In-Ga-Zn-O thin-film transistors,” Sci. Technol. Adv. Mater. 11(4), 044305 (2010).
[Crossref] [PubMed]

2008 (3)

J. Lee, I. Cho, J. Lee, and H. Kwon, “Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors,” Appl. Phys. Lett. 93(9), 093504 (2008).
[Crossref]

K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing,” Appl. Phys. Lett. 93(19), 192107 (2008).
[Crossref]

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

2007 (1)

J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo, and H.-D. Kim, “High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel,” Appl. Phys. Lett. 91(11), 113505 (2007).
[Crossref]

2006 (1)

K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin film transistors,” Jpn. J. Appl. Phys. 45(5B), 4303–4308 (2006).
[Crossref]

2004 (1)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Ahn, H.

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

Bazan, G. C.

X. Luan, J. Liu, Q. Pei, G. C. Bazan, and H. Li, “Gate-tunable electron injection based organic light-emitting diodes for low-cost and low-voltage active matrix displays,” ACS Appl. Mater. Interfaces 9(20), 16750–16755 (2017).
[Crossref] [PubMed]

Bonrad, K.

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

Bou Zerdan, R.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Chauhan, R.

N. Tiwari, R. Chauhan, H. Shieh, P. Liu, and Y. Huang, “Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions,” IEEE Trans. Electron Dev. 63(4), 1578–1581 (2016).
[Crossref]

Chen, H.

A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
[Crossref] [PubMed]

Chen, T.

A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
[Crossref] [PubMed]

Chen, Y.

Y. Chen, D. Geng, M. Mativenga, H. Nam, and J. Jang, “High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs,” IEEE Electron Device Lett. 36(2), 153–155 (2015).
[Crossref]

Cho, I.

J. Lee, I. Cho, J. Lee, and H. Kwon, “Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors,” Appl. Phys. Lett. 93(9), 093504 (2008).
[Crossref]

Choi, K.-C.

Y.-C. Han, M.-S. Lim, J.-H. Park, and K.-C. Choi, “ITO-free flexible organic light-emitting diode using ZnS/Ag/MoO3 anode incorporating a quasi-perfect Ag thin film,” Org. Electron. 14(12), 3437–3443 (2013).
[Crossref]

Christen, J. B.

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

Cui, Q.

X. Xu, Q. Cui, Y. Jin, and X. Guo, “Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150°C,” Appl. Phys. Lett. 101(22), 222114 (2012).
[Crossref]

Donner, W.

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

Geng, D.

M. Mativenga, D. Geng, B. Kim, and J. Jang, “Fully transparent and rollable electronics,” ACS Appl. Mater. Interfaces 7(3), 1578–1585 (2015).
[Crossref] [PubMed]

Y. Chen, D. Geng, M. Mativenga, H. Nam, and J. Jang, “High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs,” IEEE Electron Device Lett. 36(2), 153–155 (2015).
[Crossref]

Guo, X.

X. Xu, Q. Cui, Y. Jin, and X. Guo, “Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150°C,” Appl. Phys. Lett. 101(22), 222114 (2012).
[Crossref]

Haeming, M.

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

Han, M. K.

S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
[Crossref]

Han, Y.-C.

Y.-C. Han, M.-S. Lim, J.-H. Park, and K.-C. Choi, “ITO-free flexible organic light-emitting diode using ZnS/Ag/MoO3 anode incorporating a quasi-perfect Ag thin film,” Org. Electron. 14(12), 3437–3443 (2013).
[Crossref]

Hawker, C. J.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

He, X.

C. Wang, Z. Hu, X. He, C. Liao, and S. Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” IEEE Trans. Electron Dev. 63(9), 3800–3803 (2016).
[Crossref]

Heo, J.-S.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Hirano, M.

K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing,” Appl. Phys. Lett. 93(19), 192107 (2008).
[Crossref]

K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin film transistors,” Jpn. J. Appl. Phys. 45(5B), 4303–4308 (2006).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Hong, S.

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

M. Mativenga, S. Hong, and J. Jang, “High current stress effects in amorphous-InGaZnO4 thin-film transistors,” Appl. Phys. Lett. 102(2), 023503 (2013).
[Crossref]

Hosono, H.

T. Kamiya, K. Nomura, and H. Hosono, “Present status of amorphous In-Ga-Zn-O thin-film transistors,” Sci. Technol. Adv. Mater. 11(4), 044305 (2010).
[Crossref] [PubMed]

K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing,” Appl. Phys. Lett. 93(19), 192107 (2008).
[Crossref]

K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin film transistors,” Jpn. J. Appl. Phys. 45(5B), 4303–4308 (2006).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Hu, Z.

C. Wang, Z. Hu, X. He, C. Liao, and S. Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” IEEE Trans. Electron Dev. 63(9), 3800–3803 (2016).
[Crossref]

Huang, Y.

N. Tiwari, R. Chauhan, H. Shieh, P. Liu, and Y. Huang, “Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions,” IEEE Trans. Electron Dev. 63(4), 1578–1581 (2016).
[Crossref]

Jang, J.

J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).

S. Lee, D. Jeong, M. Mativenga, and J. Jang, “Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers,” Adv. Funct. Mater. 27(29), 1700437 (2017).
[Crossref]

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

S. Lee, J. Shin, and J. Jang, “Top Interface Engineering of Flexible Oxide Thin-Film Transistors by Splitting Active Layer,” Adv. Funct. Mater. 27(11), 1604921 (2017).
[Crossref]

M. Mativenga, D. Geng, B. Kim, and J. Jang, “Fully transparent and rollable electronics,” ACS Appl. Mater. Interfaces 7(3), 1578–1585 (2015).
[Crossref] [PubMed]

Y. Chen, D. Geng, M. Mativenga, H. Nam, and J. Jang, “High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs,” IEEE Electron Device Lett. 36(2), 153–155 (2015).
[Crossref]

M. Mativenga, S. Hong, and J. Jang, “High current stress effects in amorphous-InGaZnO4 thin-film transistors,” Appl. Phys. Lett. 102(2), 023503 (2013).
[Crossref]

Jeong, D.

S. Lee, D. Jeong, M. Mativenga, and J. Jang, “Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers,” Adv. Funct. Mater. 27(29), 1700437 (2017).
[Crossref]

Jeong, J.-C.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Jeong, J.-H.

J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo, and H.-D. Kim, “High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel,” Appl. Phys. Lett. 91(11), 113505 (2007).
[Crossref]

Jeong, J.-K.

J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo, and H.-D. Kim, “High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel,” Appl. Phys. Lett. 91(11), 113505 (2007).
[Crossref]

Jin, S.-H.

J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).

Jin, Y.

X. Xu, Q. Cui, Y. Jin, and X. Guo, “Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150°C,” Appl. Phys. Lett. 101(22), 222114 (2012).
[Crossref]

Kamiya, T.

T. Kamiya, K. Nomura, and H. Hosono, “Present status of amorphous In-Ga-Zn-O thin-film transistors,” Sci. Technol. Adv. Mater. 11(4), 044305 (2010).
[Crossref] [PubMed]

K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing,” Appl. Phys. Lett. 93(19), 192107 (2008).
[Crossref]

K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin film transistors,” Jpn. J. Appl. Phys. 45(5B), 4303–4308 (2006).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Kim, B.

M. Mativenga, D. Geng, B. Kim, and J. Jang, “Fully transparent and rollable electronics,” ACS Appl. Mater. Interfaces 7(3), 1578–1585 (2015).
[Crossref] [PubMed]

Kim, C.-J.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Kim, H.

J. Park, W. Maeng, H. Kim, and J. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

Kim, H.-D.

J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo, and H.-D. Kim, “High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel,” Appl. Phys. Lett. 91(11), 113505 (2007).
[Crossref]

Kim, H.-J.

H.-J. Kim, M.-H. Shin, J.-S. Kim, S.-E. Kim, and Y.-J. Kim, “High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling,” Sci. Rep. 7, 43063 (2017).
[Crossref] [PubMed]

Kim, J.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Kim, J.-S.

H.-J. Kim, M.-H. Shin, J.-S. Kim, S.-E. Kim, and Y.-J. Kim, “High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling,” Sci. Rep. 7, 43063 (2017).
[Crossref] [PubMed]

Kim, K.-L.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Kim, S.

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

Kim, S. J.

S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
[Crossref]

Kim, S.-E.

H.-J. Kim, M.-H. Shin, J.-S. Kim, S.-E. Kim, and Y.-J. Kim, “High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling,” Sci. Rep. 7, 43063 (2017).
[Crossref] [PubMed]

Kim, S.-I.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Kim, S.-W.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Kim, T.-H.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Kim, Y.-H.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Kim, Y.-J.

H.-J. Kim, M.-H. Shin, J.-S. Kim, S.-E. Kim, and Y.-J. Kim, “High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling,” Sci. Rep. 7, 43063 (2017).
[Crossref] [PubMed]

Klyszcz, A.

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

Kramer, J. W.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Kullman, D.

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

Kwon, H.

J. Lee, I. Cho, J. Lee, and H. Kwon, “Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors,” Appl. Phys. Lett. 93(9), 093504 (2008).
[Crossref]

Kwon, J. Y.

S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
[Crossref]

Kwon, K.-W.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Kwon, O.

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

Laitar, D. S.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Lee, C.-H.

J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).

Lee, E.-H.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Lee, H.-G.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Lee, J.

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

J. Lee, I. Cho, J. Lee, and H. Kwon, “Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors,” Appl. Phys. Lett. 93(9), 093504 (2008).
[Crossref]

J. Lee, I. Cho, J. Lee, and H. Kwon, “Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors,” Appl. Phys. Lett. 93(9), 093504 (2008).
[Crossref]

Lee, J.-C.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Lee, S.

S. Lee, J. Shin, and J. Jang, “Top Interface Engineering of Flexible Oxide Thin-Film Transistors by Splitting Active Layer,” Adv. Funct. Mater. 27(11), 1604921 (2017).
[Crossref]

S. Lee, D. Jeong, M. Mativenga, and J. Jang, “Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers,” Adv. Funct. Mater. 27(29), 1700437 (2017).
[Crossref]

Lee, S. Y.

S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
[Crossref]

Lee, S.-H.

J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).

Lee, W. G.

S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
[Crossref]

Lee, Y. K.

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

Lee, Y. W.

S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
[Crossref]

Li, H.

X. Luan, J. Liu, Q. Pei, G. C. Bazan, and H. Li, “Gate-tunable electron injection based organic light-emitting diodes for low-cost and low-voltage active matrix displays,” ACS Appl. Mater. Interfaces 9(20), 16750–16755 (2017).
[Crossref] [PubMed]

Li, Y.

A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
[Crossref] [PubMed]

C. Liu, Y. Xu, Y. Li, W. Scheideler, and T. Minari, “Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors,” J. Phys. Chem. C 117(23), 12337–12345 (2013).
[Crossref]

Liao, C.

C. Wang, Z. Hu, X. He, C. Liao, and S. Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” IEEE Trans. Electron Dev. 63(9), 3800–3803 (2016).
[Crossref]

Lim, M.-S.

Y.-C. Han, M.-S. Lim, J.-H. Park, and K.-C. Choi, “ITO-free flexible organic light-emitting diode using ZnS/Ag/MoO3 anode incorporating a quasi-perfect Ag thin film,” Org. Electron. 14(12), 3437–3443 (2013).
[Crossref]

Liu, C.

C. Liu, Y. Xu, Y. Li, W. Scheideler, and T. Minari, “Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors,” J. Phys. Chem. C 117(23), 12337–12345 (2013).
[Crossref]

Liu, J.

X. Luan, J. Liu, Q. Pei, G. C. Bazan, and H. Li, “Gate-tunable electron injection based organic light-emitting diodes for low-cost and low-voltage active matrix displays,” ACS Appl. Mater. Interfaces 9(20), 16750–16755 (2017).
[Crossref] [PubMed]

Liu, P.

N. Tiwari, R. Chauhan, H. Shieh, P. Liu, and Y. Huang, “Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions,” IEEE Trans. Electron Dev. 63(4), 1578–1581 (2016).
[Crossref]

Lu, S.

A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
[Crossref] [PubMed]

Luan, X.

X. Luan, J. Liu, Q. Pei, G. C. Bazan, and H. Li, “Gate-tunable electron injection based organic light-emitting diodes for low-cost and low-voltage active matrix displays,” ACS Appl. Mater. Interfaces 9(20), 16750–16755 (2017).
[Crossref] [PubMed]

Maeng, W.

J. Park, W. Maeng, H. Kim, and J. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

Major, M.

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

Mativenga, M.

S. Lee, D. Jeong, M. Mativenga, and J. Jang, “Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers,” Adv. Funct. Mater. 27(29), 1700437 (2017).
[Crossref]

J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).

Y. Chen, D. Geng, M. Mativenga, H. Nam, and J. Jang, “High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs,” IEEE Electron Device Lett. 36(2), 153–155 (2015).
[Crossref]

M. Mativenga, D. Geng, B. Kim, and J. Jang, “Fully transparent and rollable electronics,” ACS Appl. Mater. Interfaces 7(3), 1578–1585 (2015).
[Crossref] [PubMed]

M. Mativenga, S. Hong, and J. Jang, “High current stress effects in amorphous-InGaZnO4 thin-film transistors,” Appl. Phys. Lett. 102(2), 023503 (2013).
[Crossref]

McGrath, A. J.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Melzer, C.

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

Minari, T.

C. Liu, Y. Xu, Y. Li, W. Scheideler, and T. Minari, “Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors,” J. Phys. Chem. C 117(23), 12337–12345 (2013).
[Crossref]

Mo, Y.-G.

J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo, and H.-D. Kim, “High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel,” Appl. Phys. Lett. 91(11), 113505 (2007).
[Crossref]

Mukhopadhyay, S.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Muthuswamy, J.

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

Myny, K.

K. Myny, “The development of flexible integrated circuits based on thin-film transistors,” Nat. Electron. 1(1), 30–39 (2018).
[Crossref]

Na, J.

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

Nam, H.

Y. Chen, D. Geng, M. Mativenga, H. Nam, and J. Jang, “High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs,” IEEE Electron Device Lett. 36(2), 153–155 (2015).
[Crossref]

Narupai, B.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Noh, Y.-Y.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Nomura, K.

T. Kamiya, K. Nomura, and H. Hosono, “Present status of amorphous In-Ga-Zn-O thin-film transistors,” Sci. Technol. Adv. Mater. 11(4), 044305 (2010).
[Crossref] [PubMed]

K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing,” Appl. Phys. Lett. 93(19), 192107 (2008).
[Crossref]

K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin film transistors,” Jpn. J. Appl. Phys. 45(5B), 4303–4308 (2006).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

O’Brien, B.

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

Oh, M.-S.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Oh, S.-Y.

J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).

Ohta, H.

K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing,” Appl. Phys. Lett. 93(19), 192107 (2008).
[Crossref]

K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin film transistors,” Jpn. J. Appl. Phys. 45(5B), 4303–4308 (2006).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Page, Z. A.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Park, J.

J. Park, W. Maeng, H. Kim, and J. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

J. Park, W. Maeng, H. Kim, and J. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

Park, J.-H.

Y.-C. Han, M.-S. Lim, J.-H. Park, and K.-C. Choi, “ITO-free flexible organic light-emitting diode using ZnS/Ag/MoO3 anode incorporating a quasi-perfect Ag thin film,” Org. Electron. 14(12), 3437–3443 (2013).
[Crossref]

Park, J.-S.

J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo, and H.-D. Kim, “High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel,” Appl. Phys. Lett. 91(11), 113505 (2007).
[Crossref]

Park, S.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Park, S.-K.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Park, Y.-S.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Pei, Q.

X. Luan, J. Liu, Q. Pei, G. C. Bazan, and H. Li, “Gate-tunable electron injection based organic light-emitting diodes for low-cost and low-voltage active matrix displays,” ACS Appl. Mater. Interfaces 9(20), 16750–16755 (2017).
[Crossref] [PubMed]

Pester, C. W.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Scheideler, W.

C. Liu, Y. Xu, Y. Li, W. Scheideler, and T. Minari, “Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors,” J. Phys. Chem. C 117(23), 12337–12345 (2013).
[Crossref]

Shah, A.

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

Shieh, H.

N. Tiwari, R. Chauhan, H. Shieh, P. Liu, and Y. Huang, “Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions,” IEEE Trans. Electron Dev. 63(4), 1578–1581 (2016).
[Crossref]

Shin, J.

S. Lee, J. Shin, and J. Jang, “Top Interface Engineering of Flexible Oxide Thin-Film Transistors by Splitting Active Layer,” Adv. Funct. Mater. 27(11), 1604921 (2017).
[Crossref]

Shin, M.-H.

H.-J. Kim, M.-H. Shin, J.-S. Kim, S.-E. Kim, and Y.-J. Kim, “High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling,” Sci. Rep. 7, 43063 (2017).
[Crossref] [PubMed]

Shin, W.

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

Smith, J.

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

Sokolov, A.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Song, I.-H.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Sprague, S.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Sridharan, A.

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

Takagi, A.

K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin film transistors,” Jpn. J. Appl. Phys. 45(5B), 4303–4308 (2006).
[Crossref]

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Tiwari, N.

N. Tiwari, R. Chauhan, H. Shieh, P. Liu, and Y. Huang, “Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions,” IEEE Trans. Electron Dev. 63(4), 1578–1581 (2016).
[Crossref]

Trefonas, P.

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Um, J.

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

Um, J.-K.

J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).

von Seggern, H.

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

Walker, D. E.

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

Wang, A.

A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
[Crossref] [PubMed]

Wang, C.

C. Wang, Z. Hu, X. He, C. Liao, and S. Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” IEEE Trans. Electron Dev. 63(9), 3800–3803 (2016).
[Crossref]

Wang, Y.

A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
[Crossref] [PubMed]

Wu, Z.

A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
[Crossref] [PubMed]

Xu, X.

X. Xu, Q. Cui, Y. Jin, and X. Guo, “Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150°C,” Appl. Phys. Lett. 101(22), 222114 (2012).
[Crossref]

Xu, Y.

C. Liu, Y. Xu, Y. Li, W. Scheideler, and T. Minari, “Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors,” J. Phys. Chem. C 117(23), 12337–12345 (2013).
[Crossref]

Yang, H.-W.

J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo, and H.-D. Kim, “High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel,” Appl. Phys. Lett. 91(11), 113505 (2007).
[Crossref]

Yazdi, M. B.

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

Yi, G.-R.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Yim, H.

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

Yoon, K. S.

S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
[Crossref]

Yoon, M.-H.

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Zhang, S.

C. Wang, Z. Hu, X. He, C. Liao, and S. Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” IEEE Trans. Electron Dev. 63(9), 3800–3803 (2016).
[Crossref]

ACS Appl. Mater. Interfaces (3)

X. Luan, J. Liu, Q. Pei, G. C. Bazan, and H. Li, “Gate-tunable electron injection based organic light-emitting diodes for low-cost and low-voltage active matrix displays,” ACS Appl. Mater. Interfaces 9(20), 16750–16755 (2017).
[Crossref] [PubMed]

D. E. Walker, M. Major, M. B. Yazdi, A. Klyszcz, M. Haeming, K. Bonrad, C. Melzer, W. Donner, and H. von Seggern, “High mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering,” ACS Appl. Mater. Interfaces 4(12), 6835–6841 (2012).
[Crossref] [PubMed]

M. Mativenga, D. Geng, B. Kim, and J. Jang, “Fully transparent and rollable electronics,” ACS Appl. Mater. Interfaces 7(3), 1578–1585 (2015).
[Crossref] [PubMed]

ACS Cent. Sci. (1)

Z. A. Page, B. Narupai, C. W. Pester, R. Bou Zerdan, A. Sokolov, D. S. Laitar, S. Mukhopadhyay, S. Sprague, A. J. McGrath, J. W. Kramer, P. Trefonas, and C. J. Hawker, “Novel strategy for photopatterning emissive polymer brushes for organic light emitting diode applications,” ACS Cent. Sci. 3(6), 654–661 (2017).
[Crossref] [PubMed]

Adv. Funct. Mater. (2)

S. Lee, D. Jeong, M. Mativenga, and J. Jang, “Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers,” Adv. Funct. Mater. 27(29), 1700437 (2017).
[Crossref]

S. Lee, J. Shin, and J. Jang, “Top Interface Engineering of Flexible Oxide Thin-Film Transistors by Splitting Active Layer,” Adv. Funct. Mater. 27(11), 1604921 (2017).
[Crossref]

Appl. Phys. Lett. (6)

J.-C. Jeong, I.-H. Song, S.-I. Kim, S.-W. Kim, C.-J. Kim, J.-C. Lee, H.-G. Lee, E.-H. Lee, H. Yim, K.-L. Kim, K.-W. Kwon, and Y.-S. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett. 93, 053501 (2008).
[Crossref]

M. Mativenga, S. Hong, and J. Jang, “High current stress effects in amorphous-InGaZnO4 thin-film transistors,” Appl. Phys. Lett. 102(2), 023503 (2013).
[Crossref]

X. Xu, Q. Cui, Y. Jin, and X. Guo, “Low-voltage zinc oxide thin-film transistors with solution-processed channel and dielectric layers below 150°C,” Appl. Phys. Lett. 101(22), 222114 (2012).
[Crossref]

J. Lee, I. Cho, J. Lee, and H. Kwon, “Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors,” Appl. Phys. Lett. 93(9), 093504 (2008).
[Crossref]

K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing,” Appl. Phys. Lett. 93(19), 192107 (2008).
[Crossref]

J.-K. Jeong, J.-H. Jeong, H.-W. Yang, J.-S. Park, Y.-G. Mo, and H.-D. Kim, “High Performance Thin Film Transistors with Cosputtered Amorphous Indium Gallium Zinc Oxide Channel,” Appl. Phys. Lett. 91(11), 113505 (2007).
[Crossref]

Electron. Lett. (1)

J. Smith, A. Shah, Y. K. Lee, B. O’Brien, D. Kullman, A. Sridharan, J. Muthuswamy, and J. B. Christen, “Optogenetic neurostimulation of auricular vagus using flexible OLED display technology to treat chronic inflammatory disease and mental health disorders,” Electron. Lett. 52(11), 900–902 (2016).
[Crossref]

IEEE Electron Device Lett. (3)

W. Shin, H. Ahn, J. Na, S. Hong, O. Kwon, J. Lee, J. Um, J. Jang, S. Kim, and J. Lee, “A Driving Method of Pixel Circuit Using a-IGZOTFT for Suppression of Threshold Voltage Shift in AMLED Displays,” IEEE Electron Device Lett. 38(6), 760–762 (2017).
[Crossref]

J.-K. Um, S.-H. Lee, S.-H. Jin, M. Mativenga, S.-Y. Oh, C.-H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs with Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Electron Device Lett. 62, 2212–2218 (2017).

Y. Chen, D. Geng, M. Mativenga, H. Nam, and J. Jang, “High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs,” IEEE Electron Device Lett. 36(2), 153–155 (2015).
[Crossref]

IEEE Trans. Electron Dev. (2)

N. Tiwari, R. Chauhan, H. Shieh, P. Liu, and Y. Huang, “Photoluminescence and Reliability Study of ZnO Cosputtered IGZO Thin-Film Transistors Under Various Ambient Conditions,” IEEE Trans. Electron Dev. 63(4), 1578–1581 (2016).
[Crossref]

C. Wang, Z. Hu, X. He, C. Liao, and S. Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays,” IEEE Trans. Electron Dev. 63(9), 3800–3803 (2016).
[Crossref]

J. Phys. Chem. C (1)

C. Liu, Y. Xu, Y. Li, W. Scheideler, and T. Minari, “Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors,” J. Phys. Chem. C 117(23), 12337–12345 (2013).
[Crossref]

Jpn. J. Appl. Phys. (2)

K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, “Amorphous oxide semiconductors for high-performance flexible thin film transistors,” Jpn. J. Appl. Phys. 45(5B), 4303–4308 (2006).
[Crossref]

S. J. Kim, S. Y. Lee, Y. W. Lee, W. G. Lee, K. S. Yoon, J. Y. Kwon, and M. K. Han, “Effect of channel layer thickness on characteristics and stability of amorphous hafnium-indium-zinc oxide thin film transistors,” Jpn. J. Appl. Phys. 50(2R), 024104 (2011).
[Crossref]

Nanoscale Res. Lett. (1)

A. Wang, T. Chen, S. Lu, Z. Wu, Y. Li, H. Chen, and Y. Wang, “Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition,” Nanoscale Res. Lett. 10(1), 75 (2015).
[Crossref] [PubMed]

Nat. Electron. (1)

K. Myny, “The development of flexible integrated circuits based on thin-film transistors,” Nat. Electron. 1(1), 30–39 (2018).
[Crossref]

Nature (2)

K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7016), 488–492 (2004).
[Crossref] [PubMed]

Y.-H. Kim, J.-S. Heo, T.-H. Kim, S. Park, M.-H. Yoon, J. Kim, M.-S. Oh, G.-R. Yi, Y.-Y. Noh, and S.-K. Park, “Flexible Metal-Oxide Devices Made by Room-Temperature Photochemical Activation of Sol-Gel Films,” Nature 489(7414), 128–132 (2012).
[Crossref] [PubMed]

Org. Electron. (1)

Y.-C. Han, M.-S. Lim, J.-H. Park, and K.-C. Choi, “ITO-free flexible organic light-emitting diode using ZnS/Ag/MoO3 anode incorporating a quasi-perfect Ag thin film,” Org. Electron. 14(12), 3437–3443 (2013).
[Crossref]

Sci. Rep. (1)

H.-J. Kim, M.-H. Shin, J.-S. Kim, S.-E. Kim, and Y.-J. Kim, “High efficient OLED displays prepared with the air-gapped bridges on quantum dot patterns for optical recycling,” Sci. Rep. 7, 43063 (2017).
[Crossref] [PubMed]

Sci. Technol. Adv. Mater. (1)

T. Kamiya, K. Nomura, and H. Hosono, “Present status of amorphous In-Ga-Zn-O thin-film transistors,” Sci. Technol. Adv. Mater. 11(4), 044305 (2010).
[Crossref] [PubMed]

Thin Solid Films (1)

J. Park, W. Maeng, H. Kim, and J. Park, “Review of recent developments in amorphous oxide semiconductor thin-film transistor devices,” Thin Solid Films 520(6), 1679–1693 (2012).
[Crossref]

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Figures (6)

Fig. 1
Fig. 1 Cross-sectional view of a self-aligned thin-film transistor with a coplanar structure containing a top gate.
Fig. 2
Fig. 2 (a) Drain current as a function of the gate voltage and (b) threshold voltage uniformity for the a-In-Ga-Zn-O thin-film transistors.
Fig. 3
Fig. 3 Drain current as a function of the drain voltage for the a-In-Ga-Zn-O thin-film transistors for different values of the gate voltage Vgs.
Fig. 4
Fig. 4 Drain currents as functions of the gate voltage for the a-In-Ga-Zn-O thin-film transistors with and without (a) a positive gate bias stress at 60°C for 1 h and (b) a current stress at 60°C for 10 h.
Fig. 5
Fig. 5 Cross-sectional view of an organic light-emitting device embedded with an a-In-Ga-Zn-O thin-film transistor with a coplanar structure.
Fig. 6
Fig. 6 (a) Current density - voltage, (b) luminance - voltage, (c) current efficiency - luminance characteristics, and (d) normalized electroluminescence spectra of the green and blue OLEDs with a poly-TPD layer and a poly-TPD:DDT-Au nanocomposite layer.

Tables (2)

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Table 1 Device characteristics of the fabricated OLEDs

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Table 2 Device characteristics of the 55-inch UHID OLEDs

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