Abstract
The fluorine ion implantation applied to the polycrystalline silicon
thin-film transistors (poly-Si TFTs) with high-$\kappa$${\hbox{Pr}}_{2}{\hbox{O}}_{3}$ as gate dielectric is investigated for the first time. Using the ${\hbox{Pr}}_{2}{\hbox{O}}_{3}$ gate
dielectric can obtain a high gate capacitance density and thin equivalent-oxide
thickness, exhibiting a greatly enhancement in the driving capability of TFT
device. Introducing fluorine ions into the poly-Si film by fluorine ion implantation
technique can effectively passivate the trap states in the poly-Si film and
at the ${\hbox{Pr}}_{2}{\hbox{O}}_{3}$/poly-Si interface to improve the device electrical properties.
The ${\hbox{Pr}}_{2}{\hbox{O}}_{3}$ TFTs fabricated on fluorine-implanted poly-Si film exhibit significantly
improved electrical performances, including lower threshold voltage, steeper
subthreshold swing, higher field-effect mobility, lower off-state leakage
current, and higher on/off current ratio, as compared with the control poly-Si ${\hbox{Pr}}_{2}{\hbox{O}}_{3}$ TFTs.
Also, the incorporation of fluorine ions also improves the reliability of
poly-Si ${\hbox{Pr}}_{2}{\hbox{O}}_{3}$ TFTs against hot-carrier stressing, which is attributed to the
formation of stronger Si-F bonds. Furthermore, superior threshold-voltage
rolloff characteristic is also demonstrated in the fluorine-implanted poly-Si ${\hbox{Pr}}_{2}{\hbox{O}}_{3}$ TFTs.
Therefore, the proposed scheme is a promising technology for high-performance
and high-reliability solid-phase crystallized poly-Si TFT.
© 2008 IEEE
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