Abstract
Back-channel etched (BCE) thin-film transistors
(TFTs) are developed using a novel oxide semiconducting material,
In-W-Zn-O (IWZO). A bi-layer structure for the IWZO oxide semiconductor
layer is proposed to realize both high resistance to back-channel
etching damage and high TFT mobility. The developed IWZO BCE-TFTs
exhibit high mobilities of up to 20.2
${{cm}}^{2}/{{V}}\cdot{{s}}$
.
© 2015 IEEE
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