Abstract

In this paper, we investigated the bipolar conduction mechanism in thin-film transistors (TFTs) with oxygen plasma treatment on tin-oxide channel. The optimized p-type thin-oxide TFTs showed an on/off ratio of ${>}{{10}}^{4}$ , a threshold voltage of $-$ 1.05 V, and a field-effect mobility of ${{2.14}}\ {{cm}}^{2}{\cdot}{{V}}^{-1}{\cdot}{{s}}^{-1}$ . By increasing the exposure time of oxygen plasma, excess oxygen was incorporated to thin-oxide channel and converted thin monoxide to oxygen-rich n-type thin dioxide, which in turn led to n-type operation. It indicated that oxygen plasma was the critical factor to determine oxygen concentration, oxygen vacancies, metal ions and channel polarity. This proposed oxygen-content tuning through plasma treatment approach shows great promise in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.

© 2015 IEEE

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