Abstract
Four-wave mixing (FWM) near the semiconductor band edge is efficient owing to an enhancement of the third-order nonlinear susceptibility χ(3). The enhancement is caused by the one-photon-resonance mechanism which can be stronger than the two-photon absorption mechanism that is dominant in the region far below the band-edge; the mechanisms are illustrated in Fig. 1.
© 1995 Optical Society of America
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