Abstract
In recent years four-wave mixing in semiconductor optical amplifiers has provided a new tool for studying carrier dynamics from GHz to THz rates.1-4 At low detuning frequencies in the GHz range, the mixing nonlinearity is provided by well-understood interband mechanisms. At detuning frequencies beyond 100 GHz, however, mixing can be dominated by intraband mechanisms (i. e., occupancy modulation) such as dynamic carrier heating and spectral hole burning, with associated relaxation time constants in the sub-picosecond regime. (The possibility of strong state-occupancy four-wave mixing effects was proposed by Agrawal.5) Four-wave mixing spectra can provide frequency domain information on all of these mechanisms, including their time constants, relative strengths, and phase relationships. Experimental results showing some of these effects will be presented. The connection to recent theoretical models will also be discussed.6,7
© 1995 Optical Society of America
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