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Conferences > PEO > 1991 > WB > WB1

100-GHz Electrooptic S-Parameter Characterization of High Electron Mobility Transistors

M.Y. Frankel, J.F. Whitaker, G.A. Mourou, J.A. Valdmanis, and P.M. Smith

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Abstract

Progress in modem semiconductor device research has advanced response frequencies above 400 GHz.1 Such performance exceeds the conventional, purely electronic test instrumentation bandwidth, with the major limitations being imposed by the connectors and waveguides that are required for signal coupling to the device under test (DUT). This lack of convenient and accurate high-bandwidth device characterization methods imposes a serious obstacle to progress in semiconductor device development and utilization.

© 1991 Optical Society of America

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