High Electron Mobility Transistors - Their Evolution and Ultimate Speed

H. Sakaki

doi:10.1364/PEO.1985.ThC4

Topical Meeting on Picosecond Electronics and Optoelectronics
(Optica Publishing Group, 1985),
paper ThC4
•https://doi.org/10.1364/PEO.1985.ThC4

High Electron Mobility Transistors - Their Evolution and Ultimate Speed

H. Sakaki

Picosecond Electronics and Optoelectronics 1985

Incline Village, Nevada United States
13–15 March 1985
ISBN:

From the session
Ultrafast Electronics (ThC)

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H. Sakaki, "High Electron Mobility Transistors - Their Evolution and Ultimate Speed," in Topical Meeting on Picosecond Electronics and Optoelectronics, (Optica Publishing Group, 1985), paper ThC4.

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Abstract

Physical mechanisms governing the ultimate speed of high-purity heterojunction FETs (HEMTS) are discussed together with a preliminary experiment on a novel velocity modulation transistor.

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