Abstract

The InP HEMT technology, once an exotic technology in a few research laboratories, has begun to gain acceptance in the microwave and milJimeterwave community. Comparing to GaAs transistors, InP HEMTs exhibit significantly lower noise figures, higher gain, and higher cutoff frequencies [1], [2]. As a result, they are now the most promising candidate for ultralow-noise, ultrahigh-frequency, and ultrabroad-band amplifiers.

© 1993 Optical Society of America