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Conferences > PEO > 1991 > ThA > ThA1

75 GHz SiGe Heterojunction Bipolar Transistors: GaAs Performance in Si Technology?

J.M.C. Stork, J.H. Comfort, G.L. Patton, E.F. Crabbé, and B.S. Meyerson

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Abstract

SiGe HBTs have demonstrated new device and circuit records, extending the speed of silicon bipolar devices closer to a regime dominated by GaAs and other compound semiconductor technologies. This paper gives a review of these results and our present understanding in order to address the potential merits of SiGe HBTs in relation to Si and III-V bipolar technology.

© 1991 Optical Society of America

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