Abstract

The use of GaAs components (devices, ICs, etc.) onto Si circuitry has unveiled a new dimension in optical communication systems packaging. Current integration techniques like heteroepitaxy,¹ flip-chip bonding² and thin-film grafting,^3,4 though interesting, are still far away from the goal of reducing complexity and cost for high-volume manufacturing. The technique discussed in this paper demonstrates the integration of arrays of GaAs LEDs over large wafer-scale Si VLSI driver circuitry. GaAs LEDs, designed to operate at 870 nm, are used for their lower device complexity and higher reliability and yield. This integrated system is considered important for high-density short-distance free-space optical interconnects in MCMs or local area network (LAN) when coupled with optical fibers.

© 1996 Optical Society of America