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Alignable epitaxial lift off GaAs materials using polyimide diaphragms

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Abstract

The selective and alignable deposition of patterned, thin GaAs/GaAlAs based materials and devices onto host substrates such as Si, glass, lithium niobate, and polymers is important for the integration of GaAs with other material systems. We use a thin polyimide diaphragm as the transparent transfer medium for these thin patterned pieces of epitaxial material. Each of these devices or a group of devices is then optically aligned and selectively deposited onto the host substrate. This enables sparse distribution and frugal use of the costly GaAs material in addition to the alignable deposition of the devices, enhancing the manufacturing attractiveness of these thin epitaxial layers.

© 1991 Optical Society of America

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