Abstract

The use of GaAs components (e.g. LEDs and photodiodes) onto Si circuitry has unveiled new opportunities in optoelectronic systems packaging. Current techniques, like flip-chip bonding¹ and thin film grafting,^2,3 have demonstrated GaAs photonic devices integrated onto Si VLSI. The epitaxial lift-off (ELO) technique is quite promising, but needs to be improved for wafer-scale integration. Herein we report a potential manufacturable ELO process that allows wafer-scale GaAs-on-Si integration. An epi-layer from 2” GaAs wafer, containing LEDs and photodiodes, are lifted-off and bonded onto a 5” processed Si wafer containing functional circuits. The integrated module can be used for optical interconnect technology.

© 1996 Optical Society of America