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A novel super-lattice enhanced InGaAs/GaAs interdigitated-metal-semiconductor-metal (IMSM) photodetector structure operating at 1.3 μm has been realized. The structure is stable after high temperature rapid thermal annealing, thus offering the potential monolithic integration with ion implanted GaAs MESFETs. The photodetectors have low dark current, an internal quantum efficiency of 86%, and a bandwidth of 14 GHz.
© 1990 Optical Society of America
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