Abstract
Optoelectronic transceivers are critical components for many high-performance lightwave communication systems. In the case of a 1.3-μm analog fiber-optic link employing external modulation of a cw optical source, a transceiver module consists of an integrated-optic modulator, a photodetector, and transmit/receive electronic control circuitry. GaAs is a promising substrate material for pursuing monolithic optoelectronic transceiver integration because of its mature electronics technology and its ability to support high-performance 1.3-μm electro-optic waveguide modulators and photodetectors [1,2]. Toward this end, monolithic integration of GaAs waveguide modulators with MESFET drive electronics has already been demonstrated [3]; however, photodetector integration with active waveguide devices has not been previously reported. This paper reports for the first time the integration of an optical waveguide modulator and a 1.3-μm photodetector on a common GaAs substrate, thereby demonstrating the feasibility of monolithic optoelectronic transceiver integration.
© 1993 Optical Society of America
PDF ArticleMore Like This
C. Jagannath, A. N. M. Masum Choudhury, B. Elman, and C. A. Armiento
TuA7 Integrated Photonics Research (IPR) 1990
S. M. Lord, J. A. Trezza, M. C. Larson, B. Pezeshki, and J. S. Harris
CMB6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993
R. W. Ade, D. E. Bossi, R. P. Basilica, and J. M. Berak
MB21 Integrated Photonics Research (IPR) 1992