Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

GaAs MESFET compatible photodetectors

Not Accessible

Your library or personal account may give you access

Abstract

An interdigitated metal-semiconductor-metal (IMSM) photodetector fabricated directly on the same substrate as GaAs MESFETs holds the promise of inexpensive high-speed monolithic fiber-optic receivers.1,2 Detectors fabricated directly on semi-insulating substrates have previously shown poor quantum efficiency and an unexplained low-frequency gain. We show that a trap-induced tunneling of electrons at the sharp edge of the negative electrode can explain both of these effects. We have fabricated detectors on a number of semi-insulating substrates and show that high-efficiency detectors with frequency responses to 7 GHz are possible on certain liquid encapsulated Czochralski (LEC) substrates.

© 1986 Optical Society of America

PDF Article
More Like This
Integrated VCSELs, MSM Photodetectors, and GaAs MESFETs for Low Cost Optical Interconnects

Yue Liu, Mary Hibbs-Brenner, Bob Morgan, Jim Nohava, Bob Walterson, Terry Marta, Sommy Bounnak, Edith Kalweit, John Lehman, Doug Carlson, and Peg Wilson
SMB.3 Spatial Light Modulators (SLM) 1997

MESFET Compatible IMSM Detectors

D. L. Rogers
ThA5 Picosecond Electronics and Optoelectronics (UEO) 1987

1.3-μm InGaAs/GaAs interdigitated metal–semiconductor–metal photodetectors

C. Jagannath, A. N. M. Masum Choudhury, B. Elman, and C. A. Armiento
TuA7 Integrated Photonics Research (IPR) 1990

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved