Abstract
Spectral hole-burning in a collection of bound excitons embedded in semiconductor material is demonstrated for the first time. The spectral width of the burned hole is used to determine the dipole dephasing time T2 of the bound excitons (D0, X) in a high purity GaAs crystal at 1.8 K. The estimated T2 value is 150 ps, which is more than an order magnitude longer than the T2 value reported for two-dimensional excitons in a quantum well structure. We discuss the extremely long T2 observed for the bound excitons in relation to zero-dimensional quantum confinement effects.
© 1992 IQEC
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