Abstract

InGaAs lattice matched to InP has a suitable energy band gap for photodiodes in the 1 - 1.6 µm wavelength region, where optical fiber loss and dispersion are very low.^1,2 Many efforts to realize InGaAs avalanche photodiodes have been concentrated on liquid phase epitaxially grown InGaAs on InP substrates, which have p-n junctions formed in InGaAs by epitaxial growth,^3,4 or by impurity diffusion.⁵ This paper describes properties of photodiodes with the conventional structure which are fabricated from layers by liquid phase epitaxy (LPE) and vapor phase epitaxy (VPE). It also proposes new structures for InGaAs avalanche photodiodes, which have InP p-n junctions.

© 1980 Optical Society of America