Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1983 > FC > FC4

Low-noise high-speed InGaAs avalanche photodiodes for 1-μm wavelength region

T. Mikawa, T. Shirai, K. Nakajima, and T. Kaneda

Not Accessible

Your library or personal account may give you access

Abstract

A planar InP/In0.67Ga0.33As0.70P0.30/In0.53-Ga0.47As/InP-(111)A avalanche photodiode (APD) has been fabricated and tested for use in the optical transmission systems operating at 1.3-1.6 μm. The diode described here has been designed to show low multiplication noise, low dark current, and high-speed response by selecting a crystal orientation and by separating the multiplication region (InP) from the light absorption region (InGaAsP and InGaAs).1 Also an intermediate band gap InGaAsP layer was intentionally introduced to enhance the response speed. The cross-sectional view of the diode fabricated is shown in Fig. 1. Each n layer was grown on the (111)A-InP substrate by liquid phase epitaxy.

© 1983 Optical Society of America

PDF Article
More Like This
High-Speed planar-structure InGaAs avalanche photodiodes with InP window

K. Taguchi, Y. Sugimoto, T. Torikai, K. Makita, K. Minemura, and K. Nishida
MJ2 Optical Fiber Communication Conference (OFC) 1983

High-speed operation of InP/InGaAsP/InGaAs avalanche photodiodes

J. C. Campbell, A. G. Dentai, W. S. Holden, and B. L. Kasper
WA3 Optical Fiber Communication Conference (OFC) 1984

Advances in InGaAs avalanche photodiodes

Takao Kaneda
WA1 Optical Fiber Communication Conference (OFC) 1984

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use