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High-Speed planar-structure InGaAs avalanche photodiodes with InP window

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Abstract

Highly sensitive high-speed photodetectors for the 1.1-1.6-μm wavelength range are necessary for low-loss fiber-optic communication systems. The first demonstration of low-dark-current and high-gain InP/InGaAsP heterojunction avalanche photodiodes (APD) has been reported.1 In this structure, an InP cap layer is grown on a narrower energy gap layer to provide surface recombination-free window and carrier multiplication. Photocarriers generated in the narrow gap InGaAsP layer are injected into the InP avalanche region when the heterojunction punch-through voltage is applied.

© 1983 Optical Society of America

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