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Conferences > IGWO > 1980 > WD > WD2

A High Speed Photoconductive Integrated Optical Receiver

J.C. Gammel and J.M. Ballantyne

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Abstract

A GaAs MESFET (Metal on Semiconductor Field Effect Transistor) is a promising photoconductive detector for sensitive, high speed optical detection.1,2,3,4 We previously named this device an OPFET1 (Optical Field Effect Transistor). Response times of 50 to 100 psec with photoconductive gains of 2 to 5 were realized. The OPFET gain, speed, low noise, and low voltage form a unique set of characteristics which make it unrivaled for many applications in optical communications.

© 1980 Optical Society of America

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