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Towards Electrically-Pumped AlGaN UV-A Lasers with Transparent Tunnel Junctions

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Abstract

Molecular beam epitaxy-grown GaN/AlGaN-based active regions were optimized by varying quantum-well widths to yield increased photoluminescence intensity at UV-A wavelengths. The optimized gain medium was then used in electrically-pumped laser structures with transparent tunnel junctions.

© 2023 The Author(s)

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