Abstract
This work conducts comprehensive analysis and presents in-depth understanding regarding the n+-GaN/AlGaN/p+-GaN tunnel junction so that the hole injection, the current spreading effect and the internal quantum efficiency can be improved for III-nitride UV LEDs.
© 2017 Optical Society of America
PDF ArticleMore Like This
Shudan Xiao, Huabin Yu, Hongfeng Jia, Danhao Wang, and Haiding Sun
JW2A.111 CLEO: Applications and Technology (CLEO:A&T) 2023
Shyam Bharadwaj, Kevin Lee, SM Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena
STh1C.6 CLEO: Science and Innovations (CLEO:S&I) 2017
J Brault, B Damilano, M Leroux, A Courville, S Chenot, G. Randazzo, P Vennéguès, P DeMierry, J Massies, D Rosales, T Bretagnon, and B Gil
AF1J.3 Asia Communications and Photonics Conference (ACP) 2014