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Impact of the n+-GaN/AlGaN/p+-GaN Tunnel Junction for III-nitride UV Light-emitting Diodes

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Abstract

This work conducts comprehensive analysis and presents in-depth understanding regarding the n+-GaN/AlGaN/p+-GaN tunnel junction so that the hole injection, the current spreading effect and the internal quantum efficiency can be improved for III-nitride UV LEDs.

© 2017 Optical Society of America

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