This work conducts comprehensive analysis and presents in-depth understanding regarding the n+-GaN/AlGaN/p+-GaN tunnel junction so that the hole injection, the current spreading effect and the internal quantum efficiency can be improved for III-nitride UV LEDs.

© 2017 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription