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Performance-boosted N-polar AlGaN deep ultraviolet light-emitting diodes by a top tunnel junction

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Abstract

An N-polar AlGaN-based DUV LED incorporating a tunnel junction, named N-TJ-LED, was proposed. Compared with the regular N-polar LEDs, the N-TJ-LEDs exhibited enhanced internal quantum efficiency, higher light output power, and dramatically reduced turn-on voltage.

© 2023 The Author(s)

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