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Conferences > CLEO_SI > 2017 > STh1C > STh1C.6

Tunnel-Junction p-Contact Sub-250 nm Deep-UV LEDs

Shyam Bharadwaj, Kevin Lee, SM Islam, Vladimir Protasenko, Huili (Grace) Xing, and Debdeep Jena

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Abstract

We demonstrate a 243 nm deep-ultraviolet (deep-UV) GaN/AlN heterostructure light-emitting diode with and without a tunnel-junction p-contact. Optical emission occurs from 2 monolayer thick GaN quantum structure active regions. Use of a tunnel-junction enhances the current density under forward bias.

© 2017 Optical Society of America

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