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Highly-confined, low-loss visible photonics using foundry-fabricated Silicon Nitride circuits

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Abstract

In this paper, we present CMOS-foundry-fabricated silicon nitride photonic structures at barium emission wavelengths - 493nm and 650nm. High mode-confinement, low propagation losses, and inverse-designed 3dB splitters are demonstrated.

© 2022 The Author(s)

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