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Enhancement of Light Extraction Efficiency for Deep Ultraviolet AlGaN Quantum Wells Light-emitting Diodes with III-nitride Microspheres

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Abstract

Deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride microspheres on the p-type layer shows significant light extraction efficiency enhancement (>5.7 times) of the dominant transverse magnetic polarized spontaneous emission.

© 2012 Optical Society of America

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