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Conferences > CLEO_SI > 2017 > STh3I > STh3I.7

246 nm AlN-delta-GaN Quantum Well Ultraviolet Light-Emitting Diode

Cheng Liu, Yu Kee Ooi, SM Islam, Huili (Grace) Xing, Debdeep Jena, and Jing Zhang

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Abstract

The 246 nm AlN-delta-GaN quantum well ultraviolet light-emitting diode was proposed and realized experimentally, with the dominant transverse electric-polarized emission been verified by both the k·p simulation and the room-temperature polarization-dependent electroluminescence measurements.

© 2017 Optical Society of America

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