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Enhanced Light Extraction Efficiency of Deep-Ultraviolet Light-Emitting Diodes by Al-Coated Selective-Area-Grown GaN stripes

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Abstract

We present a new type of AlGaN-based deep ultraviolet light-emitting diodes with Al-coated selective-area-grown n-type GaN stripes to extract strong side emission perpendicular to the [0001] c-axis and to improve the electrical property.

© 2014 Optical Society of America

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