Abstract
We report GaAs/AlGaAs MQW reflection modulators with on/off ratios exceeding 20 to 1, grown by organometallic chemical vapor deposition (OMCVD). This is the first time such high contrast has been reported in an OMCVD grown structure. The contrast ratio is comparable to the best previously reported structures grown by molecular beam epitaxy.1
© 1990 Optical Society of America
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