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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper FO1

Low threshold GaAs/AIGaAs patterned quantum well lasers grown by organometallic chemical vapor deposition

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Abstract

Semiconductor quantum well (QW) lasers incorporating active regions with very small lateral dimensions have recently been attracting considerable interest. Stripe geometry QW lasers having narrow (~1 μm wide) active regions exhibit very low threshold currents (~1 mA) mainly due to their small active volume.1,2 Still smaller lateral dimensions, of the order of a few hundred angstrom, are expected to result in low dimensional quantum wire and quantum box Injection lasers which are predicted to have even lower threshold currents3 and improved spectral and dynamic characteristics.4 Conventional fabrication techniques, however, are difficult to apply in the preparation of such ultrasmall laser structures. We describe novel patterned quantum well (PQW) lasers with active regions <1000 Å wide made by organometallic chemical vapor deposition (OMCVD) on nonplanar substrates.

© 1989 Optical Society of America

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