Composition modulation of InGaAsP/InP grown by Metal-Organic Chemical-Vapor Deposition

Xi Manman; Lu Kun; Li Zhiwei; Huang Lirong

doi:10.1364/FBTA.2014.JF2A.39

International Photonics and OptoElectronics Meetings
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper JF2A.39
•https://doi.org/10.1364/FBTA.2014.JF2A.39

Composition modulation of InGaAsP/InP grown by Metal-Organic Chemical-Vapor Deposition

Xi Manman, Lu Kun, Li Zhiwei, and Huang Lirong

Fiber-Based Technologies and Applications 2014

Wuhan China
18–21 June 2014
ISBN: 1-55752-277-4

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Poster Session I (JF2A)

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X. Manman, L. Kun, L. Zhiwei, and H. Lirong, "Composition modulation of InGaAsP/InP grown by Metal-Organic Chemical-Vapor Deposition," in International Photonics and OptoElectronics Meetings, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper JF2A.39.

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Abstract

Composition modulation is observed in epitaxial layer of InGaAsP/InP and P-InGaAsP/InP grown by MOCVD, and the modulation becomes more severe with increasing the thickness of epitaxial layer.

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