Abstract

In this paper, a vertical stacked near-infrared (NIR) and extended short wavelength infrared (eSWIR) dual-band detector based on InGaAs and In_0.53Ga_0.47As/GaAs_0.5Sb_0.5 type-II superlattice (T2SL) is presented. A barrier layer of AlAs_0.56Sb_0.44 allows the independent working of the two sub-detectors. The InGaAs NIR sub-detector operates under positive bias, while the eSWIR band detector operates under reverse bias. The NIR sub-detector shows a dark current density of 7.35 × 10⁻⁵ A/cm² under the bias of 0.1 V, the responsivity of 0.88 A/W, and a specific detectivity of 4.69 × 10¹¹ cm· Hz^1/2/W at 1510 nm. Meanwhile, the dark current density of eSWIR sub-detector is 8.68 × 10⁻⁴ A/cm² under −0.4 V with the corresponding responsivity of 0.21 A/W, and a specific detectivity of 1.85×10¹⁰ cm·Hz^1/2/W at 2 μm. Furthermore, a single-pixel imaging system is built to demonstrate the capability of dual-band detectors in information capturing and target recognition.

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