Abstract
A versatile infrared imager capable of imaging the near-visible to the extended short-wavelength infrared (e-SWIR) is demonstrated using e-SWIR InAs/GaSb/AlSb type-II superlattice-based photodiodes. A bi-layer etch-stop scheme consisting of bulk and superlattice layers is introduced for substrate removal from the hybridized back-side illuminated photodetectors. The implementation of this new technique on an e-SWIR focal plane array results in a significant enhancement in the external quantum efficiency (QE) in the 1.8–0.8 μm spectral region, while maintaining a high QE at wavelengths longer than 1.8 μm. Test pixels exhibit 100% cutoff wavelengths of and at 150 and 300 K, respectively. They achieve saturated QE values of 56% and 68% at 150 and 300 K, respectively, under back-side illumination and without any anti-reflection coating. At 150 K, the photodetectors ( area) exhibit a dark current density of under a applied bias providing a specific detectivity of . At 300 K, the dark current density reaches under bias, providing a specific detectivity of .
© 2017 Optical Society of America
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