Abstract

A bias-selectable, high operating temperature, three-color short-, extended-short-, and mid-wavelength infrared photodetector based on InAs/GaSb/AlSb type-II superlattices on GaSb substrate has been demonstrated. The short-, extended-short-, and mid-wavelength channels’ 50% cutoff wavelengths were 2.3, 2.9, and 4.4 μm, respectively, at 150 K. The mid-wavelength channel exhibited a saturated quantum efficiency of 34% at 4 μm under $+200\mathrm{mV}$ bias voltage in a front-side illumination configuration and without any antireflection coating. At 200 mV, the device exhibited a dark current density of $8.7\times {10}^{-5}\mathrm{A}/{\mathrm{cm}}^2$ providing a specific detectivity of $\sim 2\times {10}^{11}\mathrm{cm}·{\mathrm{Hz}}^{1/2}/\mathrm{W}$ at 150 K. The short-wavelength channel achieved a saturated quantum efficiency of 20% at 1.8 μm. At $-10\mathrm{mV}$, the device’s dark current density was $5.5\times {10}^{-8}\mathrm{A}/{\mathrm{cm}}^2$. At zero bias, its specific detectivity was $1\times {10}^{11}\mathrm{cm}·{\mathrm{Hz}}^{1/2}/\mathrm{W}$ at 150 K. The extended short-wavelength channel achieved a saturated quantum efficiency of 22% at 2.75 μm. Under $-2\mathrm{V}$ bias voltage, the device exhibited a dark current density of $1.8\times {10}^{-6}\mathrm{A}/{\mathrm{cm}}^2$ providing a specific detectivity of $6.3\times {10}^{11}\mathrm{cm}·{\mathrm{Hz}}^{1/2}/\mathrm{W}$ at 150 K.

© 2017 Optical Society of America

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