Abstract

This study examined the electrical properties of a-IGZO thin-film transistors (TFTs) with a gate insulator of ${{SiO}}_{2}$ , in which a more TFT-industry-compatible sputtering technique was used for all processing steps. Instead of plasma enhanced chemical vapor deposition, a room-temperature sputtered ${{SiO}}_{2}$ gate insulator was used, which is more preferable for the simple and low cost process for oxide TFTs. The dielectric strength of the sputtered ${{SiO}}_{2}$ film with an oxygen ratio of 6.25% was 6.3 MV/cm, which is sufficient for a gate insulator. The a-IGZO TFTs with the sputtered ${{SiO}}_{2}$ gate insulators showed the optimal device parameters after post-annealing at $400^{\circ}{{C}}$ for 1 hour in air: saturation field-effect mobility of ${{3.80}}~{{cm}}^{2}/{{V}}\cdot{\rm s}$ , $V_{\rm th}$ of $-{{2.84}}~{{V}}$ , on/off ratio of ${{1.43}}\times {{10}}^{5}$ , and $S.S$ of 0.88 V/dec.

© 2015 IEEE

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